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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO = 200 V *Complement to Type 2SA1380 2SC3502 APPLICATIONS *Designed for ultrahigh-definition CRT display, video output applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC ICM Collector Current-Continuous 0.1 A Collector Current-Peak Collector Power Dssipation Ta=25 0.2 A 1.2 W PC Collector Power Dssipation TC=25 Ti Tstg Junction Temperature 5 150 Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Collector Capacitance CONDITIONS IC= 10A ; IE= 0 IC= 1mA ; RBE= IE= 10A ; IC= 0 IC= 20mA ;IB= 2mA B 2SC3502 MIN 200 200 5 TYP. MAX UNIT V V V 0.6 1.0 0.1 0.1 40 150 1.7 320 V V A A IC= 20mA ;IB= 2mA B VCB= 150V; IE= 0 VEB= 4V; IC= 0 IC= 10m A ; VCE= 10V IC= 10mA; VCE= 30V; IE= 0; VCB= 30V;ftest = 1MHz MHz pF hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320 isc Websitewww.iscsemi.cn |
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